Manifestation of light and heavy electrons in the galvanomagnetic characteristics of Te-Doped n-[Bi.sub.088][Sb.sub.012] single crystals

Manifestation of light and heavy electrons in the galvanomagnetic characteristics of Te-Doped n-[Bi.sub.088][Sb.sub.012] single crystals

The components of resistivity ([ρ.sub.ij]), Hall coefficient ([R.sub.ijk]), and magnetoresistance ([ρ.sub.ij,kl]) of n-[Bi.sub.088][Sb.sub.012] single crystals doped with tellurium to 0.01, 0.1, and 0.2 at % have been measured in the temperature range of 77-300 K. It is concluded that light and heav...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 45; no. 2; p. 148
Main Authors: Tairov, B.A, Ibragimova, O.I, Rahimov, A.H, Brazis, R
Format: Journal Article
Language:English
Published: Springer 01-02-2011
Subjects:
Alloys
Electric properties
Electrons
Online Access:Get full text
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Summary:The components of resistivity ([ρ.sub.ij]), Hall coefficient ([R.sub.ijk]), and magnetoresistance ([ρ.sub.ij,kl]) of n-[Bi.sub.088][Sb.sub.012] single crystals doped with tellurium to 0.01, 0.1, and 0.2 at % have been measured in the temperature range of 77-300 K. It is concluded that light and heavy electrons are involved in transport processes. The energy spacing between the bands of light and heavy electrons is found to be 40 meV, and the ratios of the effective masses and electron mobilities are estimated as [m.sup.*.sub.2]/ [m.sup.*.sub.1] =3 and b ≅ 0.16, respectively. DOI: 10.1134/S1063782611020217
ISSN:1063-7826
DOI:10.1134/S1063782611020217