Modelling Temperature Dependency of Silicon Nitride Formation Kinetic during Reaction Bonded Method

• Published in: Iranian journal materials science and engineering (Online) Vol. 16; no. 3; pp. 52 - 66
• Main Authors: E. Shahmohamadi, A. Mirhabibi, F. Golestanifard
• Format: Journal Article
• Language: English
• Published: Iran University of Science & Technology 01-09-2019
• Subjects: diffusion control; kinetic modeling; reaction bonded silicon nitride (rbsn); sharp interface model (sim); silicon nitride
• ISSN: 1735-0808; 2383-3882

An accurate prediction of reaction kinetics of silicon nitridation is of great importance in designing procedure of material production and controlling of reaction. The main purpose of the present study is to investigate the effect of temperature on the kinetics of reaction bonded silicon nitride (RBSN) formation. To achieve this, nitrogen diffusion in the silicon nitride layer is considered as a reaction controlling factor and sharp interface method based on this theory is used to develop the analytical model. In the developed model, the variations in the size of silicon particles are calculated for the whole reaction. In the experimental phase, the extent of nitridation is measured for different reaction temperatures and 4 different reaction times and then, the occurrence of full nitridation is shown by EDS analysis. Furthermore, an analytical approach was established for describing the kinetics of compound formation and the performance of the developed model is evaluated through statistical analysis. There was good agreement between experimental data and predictions of the developed model which demonstrates the accuracy of considered presumptions and reaction mechanisms. An accurate prediction of reaction kinetics of silicon nitridation is of great importance in designing procedure of material production and controlling of reaction. The main purpose of the present study is to investigate the effect of temperature on the kinetics of reaction bonded silicon nitride (RBSN) formation. To achieve this, nitrogen diffusion in the silicon nitride layer is considered as a reaction controlling factor and sharp interface method based on this theory is used to develop the analytical model. In the developed model, the variations in the size of silicon particles are calculated for the whole reaction. In the experimental phase, the extent of nitridation is measured for different reaction temperatures and 4 different reaction times and then, the occurrence of full nitridation is shown by EDS analysis. Furthermore, an analytical approach was established for describing the kinetics of compound formation and the performance of the developed model is evaluated through statistical analysis. There was good agreement between experimental data and predictions of the developed model which demonstrates the accuracy of considered presumptions and reaction mechanisms.