Capacitance-voltage characteristics of GaAs ion-implanted structures

Capacitance-voltage characteristics of GaAs ion-implanted structures

A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep trap...

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Bibliographic Details
Published in:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature no. 4; pp. 52 - 54
Main Authors: Privalov E. N., Gorev N. B., Kodzhespirova I. F.
Format: Journal Article
Language:English
Published: Politehperiodika 01-08-2008
Subjects:
capacitance-voltage characteristic
deep traps
gallium arsenide
ion-implanted structure
Schottky barrier
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Summary:A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.
ISSN:2225-5818