High current density 1.2 kV class HfO 2 -gated vertical GaN trench MOSFETs

This work reports on high current density 1.2 kV class HfO 2 -gated vertical GaN trench metal-oxide-semiconductor field-effect transistors (MOSFETs). An output current density of 330 mA mm −1 is reported at a drain bias of five volts, which, to our knowledge, is over ten-times the highest reported v...

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Bibliographic Details

Published in:	Applied physics express Vol. 17; no. 10; p. 101003
Main Authors:	Binder, Andrew T., Steinfeldt, Jeffrey, Reilly, Kevin J., Floyd, Richard S., Dickens, Peter T., Klesko, Joseph P., Allerman, Andrew A., Kaplar, Robert J.
Format:	Journal Article
Language:	English
Published:	01-10-2024
Online Access:	Get full text
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