High current density 1.2 kV class HfO 2 -gated vertical GaN trench MOSFETs

• Published in: Applied physics express Vol. 17; no. 10; p. 101003
• Main Authors: Binder, Andrew T., Steinfeldt, Jeffrey, Reilly, Kevin J., Floyd, Richard S., Dickens, Peter T., Klesko, Joseph P., Allerman, Andrew A., Kaplar, Robert J.
• Format: Journal Article
• Language: English
• Published: 01-10-2024
• ISSN: 1882-0778; 1882-0786
• DOI: 10.35848/1882-0786/ad85c1

This work reports on high current density 1.2 kV class HfO 2 -gated vertical GaN trench metal-oxide-semiconductor field-effect transistors (MOSFETs). An output current density of 330 mA mm −1 is reported at a drain bias of five volts, which, to our knowledge, is over ten-times the highest reported values for 1.2 kV class GaN or SiC MOSFETs. This work also showcases a significant achievement in demonstrating substantially thick (100 nm) HfO 2 on GaN with simultaneous low leakage current (0.5 nA at 2 MV cm −1 ), a high breakdown strength (5.2 MV cm −1 ), and a high recorded dielectric constant (22.0).