Development of a Pb(Zr,Ti)O 3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories

A highly {111}-oriented metal-organic CVD Pb(Zr,Ti)O 3 (PZT) is successfully developed using IrO x /Ir instead of Ir as the bottom electrode. The {111} PZT orientation strongly depends on the IrO x thickness and the O 2 content of the atmosphere (PO 2 ) during IrO x deposition. During PZT deposition...

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Bibliographic Details

Published in:	Japanese Journal of Applied Physics Vol. 63; no. 8; p. 8
Main Authors:	Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi
Format:	Journal Article
Language:	English
Published:	01-08-2024
Online Access:	Get full text
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