Development of a Pb(Zr,Ti)O 3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories

• Published in: Japanese Journal of Applied Physics Vol. 63; no. 8; p. 8
• Main Authors: Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi
• Format: Journal Article
• Language: English
• Published: 01-08-2024
• ISSN: 0021-4922; 1347-4065
• DOI: 10.35848/1347-4065/ad67e9

A highly {111}-oriented metal-organic CVD Pb(Zr,Ti)O 3 (PZT) is successfully developed using IrO x /Ir instead of Ir as the bottom electrode. The {111} PZT orientation strongly depends on the IrO x thickness and the O 2 content of the atmosphere (PO 2 ) during IrO x deposition. During PZT deposition, the Ir surface easily oxidizes and becomes rough, resulting in poor {111} PZT orientation. IrO x prevents Ir surface oxidation and transforms the Ir metal via O 2 reduction after the PZT deposition completion. Highly {111}-oriented PZT can be obtained by optimizing the IrO x thickness and PO 2 content.