VB-1 an N-channel In 0.53 Ga 0.47 As plasma oxide insulated gate inversion-mode fet

VB-1 an N-channel In 0.53 Ga 0.47 As plasma oxide insulated gate inversion-mode fet

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 29; no. 10; p. 1696
Main Authors: Liao, A.S.H., Tell, B., Leheny, R.F., Chang, T.Y., Nahory, R.E.
Format: Journal Article
Language:English
Published: 01-10-1982
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
ISSN:0018-9383
DOI:10.1109/T-ED.1982.20990