Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO 2

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO 2

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 71; no. 8; pp. 4655 - 4663
Main Authors: Qin, Yixin, Zhao, Zijian, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, Ni, Kai
Format: Journal Article
Language:English
Published: 01-08-2024
Online Access:Get full text
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Description
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3418942