Electronic and magnetic properties of Cd-doped zigzag AIN nanoribbons from first principles
The effect of Cd impurity on the electronic structure and magnetic properties of hydrogen-terminated AlN nanoribbons with zigzag edges （ZAINNRs） was in- vestigate using the band structure results obtained through the full potential linearized augmented plane wave （FP- LAPW） method within the density...
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| Published in: | 稀有金属：英文版 no. 10; pp. 771 - 778 |
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| Main Author: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | Get full text |
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| Summary: | The effect of Cd impurity on the electronic structure and magnetic properties of hydrogen-terminated AlN nanoribbons with zigzag edges （ZAINNRs） was in- vestigate using the band structure results obtained through the full potential linearized augmented plane wave （FP- LAPW） method within the density functional theory （DFT）. The exchange correlation potential was treated by the generalized gradient approximation within the Perdew scheme. The calculated results show that the H-terminated zigzag AlN nanoribbon is semiconducting and nonmag- netic material with a direct band gap of about 2.78 eV, while the Cd-doped H-terminated ZAlNNR structures show complete （100 %） spin polarization very close to the Fermi level, which will result in spin-anisotropic transport. The charge transport is totally dominated by Cd spin down electrons in the H-terminated ZAlNNR. These results suggest potential applications for the development of using the A1N nanoribbons in nanoelectronics and magnetoelec-tronic devices as a base. |
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| Bibliography: | The effect of Cd impurity on the electronic structure and magnetic properties of hydrogen-terminated AlN nanoribbons with zigzag edges （ZAINNRs） was in- vestigate using the band structure results obtained through the full potential linearized augmented plane wave （FP- LAPW） method within the density functional theory （DFT）. The exchange correlation potential was treated by the generalized gradient approximation within the Perdew scheme. The calculated results show that the H-terminated zigzag AlN nanoribbon is semiconducting and nonmag- netic material with a direct band gap of about 2.78 eV, while the Cd-doped H-terminated ZAlNNR structures show complete （100 %） spin polarization very close to the Fermi level, which will result in spin-anisotropic transport. The charge transport is totally dominated by Cd spin down electrons in the H-terminated ZAlNNR. These results suggest potential applications for the development of using the A1N nanoribbons in nanoelectronics and magnetoelec-tronic devices as a base. Electronic properties; Zigzag AlN nanoribbon; Magnetic properties; Density functionaltheory; Full potential linearized augmented plane wave 11-2112/TF |
| ISSN: | 1001-0521 1867-7185 |