Microstructure and Ferroelectric Properties of （Bi0.9Ho0.1）3.999Ti2.997V0.003O12 Thin Films Prepared by Sol-gel Method for Nonvolatile Memory

The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. Th...

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Bibliographic Details
Published in:	Journal of materials science & technology no. 8; pp. 679 - 681
Main Author:	Chengju Fu Zhixiong Huang Jie Li Dongyun Guo
Format:	Journal Article
Language:	English
Published:	2010
Subjects:	介电损耗微结构溶胶凝胶法铁电性能铁电特性铁电薄膜非易失性存储器
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Summary:	The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3＋/V5＋ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm （at applied field of 420 kV/cm）, dielectric constant of 305, dielectric loss of 0.031 （at 1 MHz）, good insulting behavior, as well as the fatigue-free behavior.
Bibliography:	（Bi0.9Ho0.1）3.999Ti2.997V0.003O12 thin films; Sol-gel method; Co-substitution;Ferroelectric properties; Dielectric properties TN304.9 Co-substitution 21-1315/TG Sol-gel method Dielectric properties Ferroelectric properties （Bi0.9Ho0.1）3.999Ti2.997V0.003O12 thin films TQ174.758
ISSN:	1005-0302 1941-1162