Growth and Spectroscopic Properties of Pr$^{3+}$ Doped Lu$_2$S$_3$ SingleCrystals

• Main Authors: Vanecek, Vojtech, Jary, Vitezslav, Kral, Robert, Havlak, Lubomir, Vlk, Ales, Kucerkova, Romana, Prusa, Petr, Barta, Jan, Nikl, Martin
• Format: Journal Article
• Language: English
• Published: 16-09-2024
• Subjects: Physics - Materials Science
• DOI: 10.48550/arxiv.2409.10818

Crystal Growth and Design 24 (2024) 4736 4742 For the first time Lu$_2$S$_3$ (undoped and Pr-doped) single crystals were
successfully grown from melt using micro-pulling-down (mPD) technique.
Customization of halide mPD apparatus allowed us to grow rod-shaped (\O 2 mm
and length around 20 mm) crystals of Lu$_2$S$_3$ with high melting temperature
(~1750 $^\circ$C). X-ray powder diffraction revealed that the grown crystals
exhibit the {\epsilon}-Lu$_2$S$_3$ crystal structure ($\alpha$-Al$_2$O$_3$
type, space group R-3c). Optical and scintillation properties of both the
undoped and Pr$^{3+}$ doped Lu$_2$S$_3$ were investigated. Fast 5d-4f Pr$^{3+}$
luminescence was observed in both photoluminescence and radioluminescence
spectra. The presented technology is an effective tool for the exploration of a
large family of high-melting sulfides. Such materials show promise for
application as scintillators, active laser media, and optoelectronic
components.