On the first steps of grain boundary dislocation stress relaxations in copper

On the first steps of grain boundary dislocation stress relaxations in copper

The influence of the stacking-fault energy on the interaction between a lattice dislocation and a Σ3 grain boundary has been investigated in copper. The entrance processes of the dissociated dislocations as observed by transmission electron microscopy (conventional, weak-beam and image contrast simu...

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Bibliographic Details
Published in:International journal of materials research Vol. 95; no. 4; pp. 223 - 225
Main Authors: Couzinié, J. P., Décamps, B., Priester, L.
Format: Journal Article
Language:English
Published: De Gruyter 30-12-2021
Subjects:
Copper
Dislocations
DSC products
Grain boundary
Stacking-fault energy
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Summary:The influence of the stacking-fault energy on the interaction between a lattice dislocation and a Σ3 grain boundary has been investigated in copper. The entrance processes of the dissociated dislocations as observed by transmission electron microscopy (conventional, weak-beam and image contrast simulation) are supported by atomistic simulations. They may be explained, on the basis of theoretical models, by the occurrence of a constriction phenomenon. The observed processes constitute the first steps of the intergranular stress accommodation which plays an important role in the plastic deformation of polycrystals.
ISSN:1862-5282
2195-8556
DOI:10.3139/ijmr-2004-0046