Electrical contacts to carbon nanotubes down to 1 nm in diameter

Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ∼ 1.6 nm . Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs ( S -SWNTs) with d < ∼ 1.6 nm . With...

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Bibliographic Details
Published in:	Applied physics letters Vol. 87; no. 17; pp. 173101 - 173101-3
Main Authors:	Kim, Woong, Javey, Ali, Tu, Ryan, Cao, Jien, Wang, Qian, Dai, Hongjie
Format:	Journal Article
Language:	English
Published:	American Institute of Physics 24-10-2005
Online Access:	Get full text
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Summary:	Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ∼ 1.6 nm . Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs ( S -SWNTs) with d < ∼ 1.6 nm . With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ⩽ ∼ 1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.2108127