Epitaxial growth of the first two members of the Ban+1InnO2.5n+1 Ruddlesden–Popper homologous series

• Published in: Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 40; no. 6
• Main Authors: Hensling, Felix V. E., Smeaton, Michelle A., Show, Veronica, Azizie, Kathy, Barone, Matthew R., Kourkoutis, Lena F., Schlom, Darrell G.
• Format: Journal Article
• Language: English
• Published: 01-12-2022
• ISSN: 0734-2101; 1520-8559
• DOI: 10.1116/6.0002205

We demonstrate the epitaxial growth of the first two members, and the
n
=
∞ member of the homologous Ruddlesden–Popper series of
Ba
n
+
1
In
n
O
2.5
n
+
1 of which the
n
=
1 member was previously unknown. The films were grown by suboxide molecular-beam epitaxy where the indium is provided by a molecular beam of indium-suboxide [
In
2O (g)]. To facilitate ex situ characterization of the highly hygroscopic barium indate films, a capping layer of amorphous
SiO
2 was deposited prior to air exposure. The structural quality of the films was assessed by x-ray diffraction, reflective high-energy electron diffraction, and scanning transmission electron microscopy.