A technique for modelling < e1 > S < /e1 > -parameters for HEMT structures as a function of gate bias
A physically based technique for modeling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device's S-parameters as a function of the applied gate bias. The physical...
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| Published in: | IEEE transactions on microwave theory and techniques Vol. 40; no. 7; pp. 1430 - 1440 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-07-1992
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| Online Access: | Get full text |
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| Summary: | A physically based technique for modeling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device's S-parameters as a function of the applied gate bias. The physical basis facilitates the modeling of different types of HEMT structures. Measured S-parameters and simulation results over a frequency range of 1 to 25 GHz are presented for three different HEMT structures: uniformly doped, GaAs channel; pulse-doped, GaAs channel; and uniformly doped, strained InGaAs channel |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/22.146324 |