Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts

Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance. In this research, a p-type molybdenum ditelluride (p-MoTe2) based Schottky barrier diode was fabricated using asymmetric metal...

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Published in:RSC advances Vol. 9; no. 18; pp. 10017 - 10023
Main Authors: Aftab, Sikandar, Muhammad Waqas Iqbal, Amir Muhammad Afzal, M Farooq Khan, Hussain, Ghulam, Waheed, Hafiza Sumaira, Muhammad Arshad Kamran
Format: Journal Article
Language:English
Published: Cambridge Royal Society of Chemistry 01-01-2019
The Royal Society of Chemistry
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Summary:Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance. In this research, a p-type molybdenum ditelluride (p-MoTe2) based Schottky barrier diode was fabricated using asymmetric metal contacts. The MoTe2 nano-flakes were mechanically exfoliated using adhesive tape and with the help of dry transfer techniques, the flakes were transferred onto silicon/silicon dioxide (Si/SiO2) substrates to form the device. The Schottky-barrier was formed as a result of using ultra-low palladium/gold (Pd/Au) and high resistive chromium/gold (Cr/Au) metal electrodes. The Schottky diode exhibited a clear rectifying behavior with an on/off ratio of ∼103 and an ideality factor of ∼1.4 at zero gate voltage. In order to check the photovoltaic response, a green laser light was illuminated, which resulted in a responsivity of ∼3.8 × 103 A W−1. These values are higher than the previously reported results that were obtained using conventional semiconducting materials. Furthermore, the barrier heights for Pd and Cr with a MoTe2 junction were calculated to be 90 meV and 300 meV, respectively. In addition, the device was used for rectification purposes revealing a stable rectifying behavior.
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ISSN:2046-2069
DOI:10.1039/c8ra09656b