Tuned Transport Path of Perovskite MAPbI3-based Memristor Structure

• Published in: Chemphyschem Vol. 24; no. 18; p. e202300210
• Main Authors: Doan, Uyen Tu Thi, Le, Duy Khanh, Huynh, Truong Lam, Ngo, Tung Thanh, Vo, Trieu Quang, Thi, Minh Thu Tran, Pham, Anh Tuan Thanh, Tran, Vinh Cao, Nguyen, Phuong Tuyet, Pham, Kim Ngoc
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 15-09-2023
• Subjects: Charge transport; Chromium; Electric fields; Electric potential; Hopping conduction; Metallizing; Perovskites; Random access memory; Voltage; Charge transport; Conductive filament; Organic-inorganic perovskite; Methylammonium lead iodide; Resistive switching
• DOI: 10.1002/cphc.202300210
• EISSN: 1439-7641
• ISSN: 1439-4235

In this study, the features of resistive random access memory (RRAM) employing a straightforward Cr/MAPbI3/FTO three-layer structure have been examined and clarified. The device displays various resistance switching (RS) behavior at various sweep voltages between 0.5 and 5 V. The RS effect has a conversion in the direction of the SET and RESET processes during sweeping for a number of cycles at a specific voltage.  The directional change of the RS processes corresponds to the dominant transition between the generation/recombination of iodide ion and vacancy in the MAPbI3 perovskite layer and the electrochemical metallization of the Cr electrode under the influence of an electric field, which results in the conductive filament (CF) formation/rupture. At each stage, these processes are controlled by specific charge conduction mechanisms, including Ohmic conduction, space-charge-limited conduction (SCLC), and variable-range hopping (VRH). By identifying the biased voltage and the quantity of voltage sweep cycles, one can take a new approach to control or modulate the pathways for effective charge transport. This new approach is made possible by an understanding of the RS characteristics and the corresponding mechanisms causing the variation of RS behavior in the structure.