Iridium layer as oxygen barrier and growth substrate for oriented PZT thin films

Iridium layer as oxygen barrier and growth substrate for oriented PZT thin films

Iridium thin films, grown by RF sputtering method and their behaviour as oxygen diffusion barrier were investigated. The growth of oriented PZT thin films on Ir barrier layer is also discussed. Sheet resistance was measured for Ir/SiO2/Si samples annealed in 02 for 15 min. at temperatures up to 750...

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Bibliographic Details
Published in:Journal of Optoelectronics and Advanced Materials Vol. 9; no. 5; pp. 1508 - 1510
Main Authors: Trupina, L, Miclea, C, Tanasoiu, C, Amarande, L, Miclea, C T, Cioangher, M
Format: Journal Article
Language:English
Published: 01-05-2007
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Summary:Iridium thin films, grown by RF sputtering method and their behaviour as oxygen diffusion barrier were investigated. The growth of oriented PZT thin films on Ir barrier layer is also discussed. Sheet resistance was measured for Ir/SiO2/Si samples annealed in 02 for 15 min. at temperatures up to 750 deg C. The electrical resistivity of Ir film decreases with increasing annealing temperatures due to a better crystallization. PZT films deposited by RF sputtering method on Ir(111) by means of a 2 nm thick TiO2 seed layer grow almost perfectly in (111) orientation (98% texture index). Ir layer can be used as a barrier layer in stacked capacitor FRAM's and it also allows the growth of oriented PZT thin films.
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ISSN:1454-4164