Growth of thick AlxGa1-xN ternary alloy by hydride vapor-phase epitaxy

• Published in: Journal of crystal growth Vol. 300; no. 1; pp. 164 - 167
• Main Authors: YAMANE, Takayoshi, SATOH, Fumitaka, MURAKAMI, Hisashi, KUMAGAI, Yoshinao, KOUKITU, Akinori
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 01-03-2007
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from vapor; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Theory and models of film growth; Vapor phase epitaxy; growth from vapor phase; Bl. Nitrides; Inorganic compounds; 61.66.Dk; Growth rate; Gallium nitrides; A1. Crystal structure; Ternary alloys; 81.15.Kk; VPE; Hydrides; Crystal growth from vapors; Precursor; A3. Hydride vapor-phase epitaxy; Nitrides; Aluminium nitrides; Crystal structure; 81.05.Ea; Bl. Alloys; Semiconductor materials; Ternary compounds; Thick films; B2. Semiconducting aluminum compounds; B2. Semiconducting ternary compounds; 61.10.Nz; Partial pressure; Low pressure; Growth mechanism; Gallium selenides
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.11.009

Growth of thick AlxGa1-xN ternary alloy using AlCl3 and GaCl gases as group III precursors was performed by hydride vapor-phase epitaxy (HVPE). C-axis-oriented AlGaN layers could be grown at 1100 deg C. It was found that the growth of AlxGa1-xN by HVPE was affected by the presence of H2 in the carrier gas. Therefore, the solid composition x in AlxGa1-xN ternary alloy could be controlled by changing the input Al mole ratio of the group III precursor (RAl) and/or the low range ( < 10%) of partial pressure of hydrogen (H2) in the carrier gas (Fo). The growth rate of approximately 30mum/h was obtained under inert carrier gas (Fo=0.0), while the growth rate decreased rapidly in the low RAl under a low partial pressure of H2 in the carrier gas (Fo=0.1). These results are in good agreement with the thermodynamic prospect. Thus, the growth of AlxGa1-xN using HVPE is thermodynamically controlled.