Electrical characterization of SOI substrates incorporating WSix ground planes

• Published in: IEEE electron device letters Vol. 26; no. 2; pp. 72 - 74
• Main Authors: BAIN, M, JIN, M, LOH, S. H, BAINE, P, ARMSTRONG, B. M, GAMBLE, H. S, MCNEILL, D. W
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01-02-2005; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Compound structure devices; Design. Technologies. Operation analysis. Testing; Dielectric, amorphous and glass solid devices; Electronics; Exact sciences and technology; Integrated circuits; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Performance evaluation; Minority carrier; tungsten compounds; Crosstalk; MOS structure; silicon-on-insulator (SOI); MOS capacitor; Silicon on insulator technology; wafer bonding; silicon; Carrier lifetime; MOS capacitors; Integrated circuit; Figure of merit; Electrical characteristic; Damaging
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2004.841185