Improved reliability of HfO2/SiON gate stack by fluorine incorporation

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Bibliographic Details
Published in:IEEE electron device letters Vol. 27; no. 4; pp. 240 - 242
Main Authors: LU, Wen-Tai, CHIEIN, Chao-Hsin, LAN, Wen-Ting, LEE, Tsung-Chieh, LEHNEN, Peer, HUANG, Tiao-Yuan
Format: Journal Article
Language:English
Published: New York, NY Institute of Electrical and Electronics Engineers 01-04-2006
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Description
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.871539