Improved reliability of HfO2/SiON gate stack by fluorine incorporation
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Published in: | IEEE electron device letters Vol. 27; no. 4; pp. 240 - 242 |
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Main Authors: | , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
New York, NY
Institute of Electrical and Electronics Engineers
01-04-2006
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects: | |
Online Access: | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/LED.2006.871539 |