Metal Gate-HfO2 MOS structures on GaAs substrate with and without Si interlayer

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Bibliographic Details
Published in:	IEEE electron device letters Vol. 27; no. 3; pp. 145 - 147
Main Authors:	OK, Injo, KIM, Hyoung-Sub, LEE, Jack C, MANHONG ZHANG, KANG, Chang-Yong, SE JONG RHEE, CHOI, Changhwan, KRISHNAN, Siddarth A, LEE, Tackhwi, FENG ZHU, THAREJA, Gaurav
Format:	Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 01-03-2006 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Applied sciences Compound structure devices Dielectric, amorphous and glass solid devices Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Interfacial layer Annealing HfO2 MOS structure GaAs leakage current density MOS capacitor V shape frequency dispersion Si Capacitance Leakage current High k dielectric interface control layer Current density Voltage capacity curve Electrical characteristic
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ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2006.870243