Detecting Induced p±ip Pairing at the Al-InAs Interface with a Quantum Microwave Circuit

Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductiv...

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Bibliographic Details
Published in:	Physical review letters Vol. 128; no. 10; p. 107701
Main Authors:	Phan, D, Senior, J, Ghazaryan, A, Hatefipour, M, Strickland, W M, Shabani, J, Serbyn, M, Higginbotham, A P
Format:	Journal Article
Language:	English
Published:	United States 11-03-2022
Online Access:	Get full text
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Summary:	Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband p±ip pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1079-7114
DOI:	10.1103/PhysRevLett.128.107701