Ultra-low-loss high-aspect-ratio Si3N4 waveguides

Ultra-low-loss high-aspect-ratio Si3N4 waveguides

We characterize an approach to make ultra-low-loss waveguides using stable and reproducible stoichiometric Si3N4 deposited with low-pressure chemical vapor deposition. Using a high-aspect-ratio core geometry, record low losses of 8-9 dB/m for a 0.5 mm bend radius down to 3 dB/m for a 2 mm bend radiu...

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Bibliographic Details
Published in:Optics express Vol. 19; no. 4; pp. 3163 - 3174
Main Authors: Bauters, Jared F, Heck, Martijn J R, John, Demis, Dai, Daoxin, Tien, Ming-Chun, Barton, Jonathon S, Leinse, Arne, Heideman, René G, Blumenthal, Daniel J, Bowers, John E
Format: Journal Article
Language:English
Published: United States 14-02-2011
Online Access:Get full text
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Summary:We characterize an approach to make ultra-low-loss waveguides using stable and reproducible stoichiometric Si3N4 deposited with low-pressure chemical vapor deposition. Using a high-aspect-ratio core geometry, record low losses of 8-9 dB/m for a 0.5 mm bend radius down to 3 dB/m for a 2 mm bend radius are measured with ring resonator and optical frequency domain reflectometry techniques. From a waveguide loss model that agrees well with experimental results, we project that 0.1 dB/m total propagation loss is achievable at a 7 mm bend radius with this approach.
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ISSN:1094-4087
DOI:10.1364/OE.19.003163