Coupling length scales for multiscale atomistics-continuum simulations: atomistically induced stress distributions in Si/Si3N4 nanopixels

• Published in: Physical review letters Vol. 87; no. 8; p. 086104
• Main Authors: Lidorikis, E, Bachlechner, M E, Kalia, R K, Nakano, A, Vashishta, P, Voyiadjis, G Z
• Format: Journal Article
• Language: English
• Published: United States 20-08-2001
• ISSN: 0031-9007
• DOI: 10.1103/PhysRevLett.87.086104

A hybrid molecular-dynamics (MD) and finite-element simulation approach is used to study stress distributions in silicon/silicon-nitride nanopixels. The hybrid approach provides atomistic description near the interface and continuum description deep into the substrate, increasing the accessible length scales and greatly reducing the computational cost. The results of the hybrid simulation are in good agreement with full multimillion-atom MD simulations: atomic structures at the lattice-mismatched interface between amorphous silicon nitride and silicon induce inhomogeneous stress patterns in the substrate that cannot be reproduced by a continuum approach alone.