DEPOSITION OF SILICON OXIDE THIN FILMS IN TEOS WITH ADDITION OF OXYGEN TO THE PLASMA AMBIENT: IR SPECTRA ANALYSIS
Silicon oxide thin films deposited on Si substrates in a RF-plasma CVD reactor, using Si(OC2H5)4 (TEOS) as the precursor and oxygen as the gas ambient, were studied by IR spectrophotometry. All depositions were performed at a substrate temperature of 200 deg C, a plasma power of 20 or 80 W and with...
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| Published in: | Journal of Optoelectronics and Advanced Materials Vol. 7; no. 1; pp. 389 - 392 |
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| Main Authors: | , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-02-2005
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| Online Access: | Get full text |
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| Summary: | Silicon oxide thin films deposited on Si substrates in a RF-plasma CVD reactor, using Si(OC2H5)4 (TEOS) as the precursor and oxygen as the gas ambient, were studied by IR spectrophotometry. All depositions were performed at a substrate temperature of 200 deg C, a plasma power of 20 or 80 W and with a DC-bias of -120 V applied to the Si substrate. The observed IR peaks were assigned to corresponding vibrational modes. Peaks related to Si-H, C-H and OH bond vibrations were also detected. Some degree of porosity exists, resulting in a lower refractive index of the films than that typical for SiO2 material. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 1454-4164 |