Electron states energies and wave functions of V-shaped quantum wires with graded interfaces

• Published in: Journal of Optoelectronics and Advanced Materials Vol. 9; no. 1; pp. 197 - 200
• Main Authors: Kirilov, K, Donchev, V, Saraydarov, M, Germanova, K
• Format: Journal Article
• Language: English
• Published: 01-01-2007
• ISSN: 1454-4164

We have studied the effect of graded interfaces on the bound electron states energies and wave functions of a model V-shaped GaAs/AIGaAs quantum wire (QWR). The calculations are performed by means of the envelope-function approximation combined with the so called adiabatic approximation approach for V-shaped QWRs. The interface grading is modelled by a concentration profile, obtained as a result of the material inter-diffusion across the interfaces. It is found that with increased interface grading, the energies of the QWR bound states increase monotonically, while the ground state wave function shape reveals a non-monotonic behaviour - it initially shrinks in both directions and then broadens again predominantly in the growth direction. The obtained results show that the energy levels and wave function localization in quantum wires can be modified in a controllable manner by intentionally provoked inter-diffusion of material components across the interfaces.