Comparative Study of High-k/GaSb Interfaces for Use in Antimonide Based MOSFETs

Saved in:

Bibliographic Details
Published in:	IEEE electron device letters Vol. 35; no. 1; pp. 21 - 23
Main Authors:	BHUWALKA, Krishna K, SHIH WEI WANG, PASSLACK, Matthias, DIAZ, Carlos H, NORIEGA, Odille C, HOLLAND, Martin C, CONTRERAS-GUERRERO, Rocio, EDIRISOORIYA, Madavie, DOORNBOS, Gerben, WANG, Chien-Hsun, MYERS, Thomas H, DROOPAD, Ravi
Format:	Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 2014
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Ternary compound MOS technology Interface state MOSFET Binary compound Density of states Gallium antimonides III-V semiconductor Photoluminescence GaSb Hafnium oxide III-V compound interface state density high-k interface III-VI compound Lanthanum aluminate High k dielectric Aluminium antimonides Alumina Comparative study Bilayers
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2013.2289359