On the Electron and Hole Tunneling in a HfO2 Gate Stack With Extreme Interfacial-Layer Scaling

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Bibliographic Details
Published in:	IEEE electron device letters Vol. 32; no. 7; pp. 865 - 867
Main Authors:	ANDO, Takashi, SATHAYE, Ninad D, MURALI, Kota V. R. M, CARTIER, Eduard A
Format:	Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 01-07-2011
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Interfacial layer Gate current Transfer matrix Direct tunneling Tunnel effect Transistor gate Multiple layer Hafnium oxide IV-VI compound Field effect transistor p channel Silicon oxides scavenging Band offset
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Description
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2011.2146751