Promising storage capacitor structures with thin Ta2O5 film for low-power high-density DRAM's

Promising storage capacitor structures with thin Ta2O5 film for low-power high-density DRAM's

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 37; no. 9; pp. 1939 - 1947
Main Authors: SHINRIKI, H, KISU, T, KIMURA, S.-I, NISHIOKA, Y, KAWAMOTO, Y, MUKAI, K
Format: Journal Article
Language:English
Published: New York, NY Institute of Electrical and Electronics Engineers 01-09-1990
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Microelectronic fabrication
Random access memory(RAM)
MIM structure
SIS structure
Storage capacity
Memory
Dynamical storage
Multiple layer
MIS structure
Experimental study
Tantalum Oxides
Thin film
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Description
ISSN:0018-9383
1557-9646
DOI:10.1109/16.57154