60-GHz power performance on ion-implanted InxGa(1-x)As/GaAs MESFET's

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Bibliographic Details
Published in:	IEEE electron device letters Vol. 11; no. 11; pp. 496 - 498
Main Authors:	FENG, M, LAU, C. L, LEPKOWSKI, T. R, BRUSENBACK, P, SCHELLENBERG, J. M
Format:	Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 01-11-1990
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Gallium Arsenides Field effect transistor Gallium Indium Arsenides Mixed Ion implantation Microwave transistor Performance Metal semiconductor field effect transistor III-V compound Power transistor
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ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.63031