Two types of traps at the Si/SiO2 interface characterized by their cross sections

Two types of traps at the Si/SiO2 interface characterized by their cross sections

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Bibliographic Details
Published in:Microelectronic engineering Vol. 48; no. 1-4; pp. 159 - 162
Main Authors: ALBOHN, J, FÜSSEL, W, NGO DUONG SINH, KLIEFOTH, K, FLIETNER, H, FUHS, W
Format: Conference Proceeding
Language:English
Published: Amsterdam Elsevier Science 01-09-1999
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
MOS technology
Interface properties
Density of states
Microelectronic fabrication
Experimental result
Cross section
Static properties
n type semiconductor
Silicon Oxides
Silicon
Time constant
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Description
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(99)00361-5