High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors

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Bibliographic Details
Published in:	IEEE photonics technology letters Vol. 6; no. 7; pp. 811 - 813
Main Authors:	I-HSING TAN, DUDLEY, J. J, BABIC, D. I, COHEN, D. A, YOUNG, B. D, HU, E. L, BOWERS, J. E, MILLER, B. I, KOREN, U, YOUNG, M. G
Format:	Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 01-07-1994
Subjects:	Applied sciences Electronics Exact sciences and technology Fundamental areas of phenomenology (including applications) Imaging detectors and sensors Optical elements, devices, and systems Optics Optoelectronic devices Photodetectors (including infrared and CCD detectors) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Gallium arsenides Inorganic compounds Ternary compounds Organometallic compounds Optics Photodetectors p i n junctions Experimental study Quantum yield Indium arsenides CVD Fabrication Infrared radiation Resonance Fabry Perot resonator
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ISSN:	1041-1135 1941-0174
DOI:	10.1109/68.311462