Effect of NH3-plasma treatment and CMP modification on TDDB improvement in Cu metallization

Effect of NH3-plasma treatment and CMP modification on TDDB improvement in Cu metallization

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 48; no. 7; p. 1340
Main Authors: Noguchi, J, Ohashi, N, Jimbo, T, Yamaguchi, H, Takeda, K.-i, Hinode, K
Format: Journal Article
Language:English
Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01-07-2001
Online Access:Get full text
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Description
ISSN:0018-9383
1557-9646
DOI:10.1109/16.930649