Fe-doped and (Zn, Fe) co-doped CdS films : Could the Zn doping affect the concentration of Fe2+ and the optical properties?

• Published in: Physica. B, Condensed matter Vol. 389; no. 2; pp. 248 - 251
• Main Authors: KEWEI LIU, ZHANG, J. Y, XIAOJIE WU, BINGHUI LI, BINGSHENG LI, YOUMING LU, XIWU FAN, DEZHEN SHEN
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 15-02-2007
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Ii-vi semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Defect states; Fluctuations; Impurity density; Zinc additions; Cadmium sulfides; Doping; Photoluminescence; Cd1-x-yFexZnyS; Absorption edges; Band gap energy; MOCVD; Thin films; Hexagonal lattices; Energy gap; Shallow level; Iron additions; 71.20.Nr; 71.55.Gs; 78.20.-e; 61.10.Nz; Codoping; Absorption edge
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2006.06.157

Cd1-xFexS and Cd1-x-yFexZnyS thin films were grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on c-Al2O3 substrates. The films fabricated at under an hydrogen pressure of 76Torr had hexagonal structure with only one (0002) diffraction peak. The samples with low doping content have sharp absorption edges. It is found that the absorption edge and the emission peak positions of the Cd1-x-yFexZnyS film shift to high energy due to the Zn-doping. The band gap energy could be tuned in a wide range with the change of Zn content. The broadening of the Cd1-x-yFexZnyS emission peak could be attributed to the alloy fluctuations and the shallow defect in the samples.