Growth and Characterization of InTlSb for IR-Detectors

• Published in: Journal of electronic materials Vol. 25; no. 8; pp. 1209 - 1214
• Main Authors: Karam, N H, Sudharsanan, R, Parodos, T, Dodd, M A
• Format: Journal Article
• Language: English
• Published: Warrendale Springer Nature B.V 01-08-1996
• Subjects: Chemical compounds; Chemical vapor deposition; Electronics; Infrared imaging systems; Sensors; Temperature effects
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/BF02655010

Epitaxial In^sub 1-x^Tl^sub x^Sb films with compositions up to x = 0.1 have been demonstrated using the metalorganic chemical vapor deposition technique on InSb and GaAs substrates. A specially designed high-temperature source delivery system was used for the low vapor pressure cyclopentadienylthallium source. Tl-compositions in the deposited films were measured by Rutherford backscattering spectroscopy which confirmed the incorporation of up to 10% Tl. Room temperature infrared transmission spectra of InTlSb exhibited considerable absorption beyond 7 µm. Photoconductive detectors were fabricated in InTlSb films grown on semi-insulating GaAs. Spectral response measurements showed substantial photoresponse at 8.5 to 14 µm. In spite of the large lattice-mismatch (~14%) between InTlSb and GaAs, photoconductive detectors exhibited blackbody detectivities (D*^sub bb^) of 5.0 × 10^sup 8^ cm-Hz^sup 1/2^W^sup -1^ at 40K. [PUBLICATION ABSTRACT]