High power (> 5 W) lambda similar to 9.6 mu m tapered quantum cascade lasers grown by OMVPE

• Published in: Journal of crystal growth Vol. 370; pp. 212 - 216
• Main Authors: Wang, CA, Goyal, A K, Menzel, S, Calawa, DR, Spencer, M, Connors, M K, McNulty, D, Sanchez, A, Turner, G W, Capasso, F
• Format: Journal Article
• Language: English
• Published: 01-05-2013
• Subjects: Barriers; Crystal growth; Diffraction; Gain; Phase shift; Quantum cascade lasers; Vapor phase epitaxy; X-rays
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2012.11.045

AlInAs/GaInAs superlattices (SLs) with barrier and well layers of various thicknesses were grown by organometallic vapor phase epitaxy to optimize growth of quantum cascade lasers (QCLs). High-resolution x-ray diffraction data of nominally lattice-matched SLs show a systematic shift toward more compressively strained SLs as the barrier/well layer thicknesses are decreased below about 10 nm. This shift is attributed to In surface segregation in both AlInAs and GaInAs. This shift is compensated for in the growth of ultra-thin layers in QCL structures. QCLs with tapered gain regions and emitting at 9.6 mu m are demonstrated with peak power as high as 5.3 W from one facet at 20 degree C.