Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3- mu m diode lasers

The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilute-nitride GaAs-based near 1.3- mu m lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experimen...

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Bibliographic Details
Published in:	IEEE journal of selected topics in quantum electronics Vol. 11; no. 5
Main Authors:	Shterengas, L, Belenky, G L, Yeh, Jeng-Ya, Mawst, L J, Tansu, N
Format:	Journal Article
Language:	English
Published:	01-09-2005
Subjects:	Devices Dilution Gain Lasers Nitrides Quantum electronics Quantum wells Ridges
Online Access:	Get full text
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Summary:	The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilute-nitride GaAs-based near 1.3- mu m lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the range 1.7-2.5 for lambda =1.22--1.34 mu m dilute-nitride GaAs-based lasers. Differential gain and index with respect to either current or carrier concentration are reduced in dilute-nitride devices.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	1077-260X
DOI:	10.1109/JSTQE.2005.853736