A novel 0.5-μm n+-p+ poly-gated salicide CMOS process using germanium implantation

Saved in:

Bibliographic Details
Published in:	IEEE transactions on electron devices Vol. 36; no. 11; pp. 2422 - 2432
Main Authors:	PFIESTER, J. R, YEARGAIN, J. R, SWENSON, M. S, ALVIS, J. R
Format:	Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 01-11-1989
Subjects:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
ISSN:	0018-9383 1557-9646
DOI:	10.1109/16.43662