Investigation on origin of Z{sub 1/2} center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

The Z{sub 1/2} center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z{sub 1/2} center is responsible for the carrier compensation...

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Bibliographic Details
Published in:	Applied physics letters Vol. 102; no. 11
Main Authors:	Kawahara, Koutarou, Suda, Jun, Kimoto, Tsunenobu, Thang Trinh, Xuan, Tien Son, Nguyen, Janzen, Erik
Format:	Journal Article
Language:	English
Published:	United States 18-03-2013
Subjects:	CAPACITANCE CARBON CARRIER LIFETIME CARRIERS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL DEFECTS DEEP LEVEL TRANSIENT SPECTROSCOPY ELECTRON BEAMS ELECTRON SPIN RESONANCE EPITAXY IRRADIATION LAYERS PARAMAGNETISM RESONANCE SEMICONDUCTOR MATERIALS SILICON CARBIDES TECHNOLOGY TEKNIKVETENSKAP VACANCIES
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Summary:	The Z{sub 1/2} center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z{sub 1/2} center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z{sub 1/2} defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (V{sub C}) determined by electron paramagnetic resonance, suggesting that the Z{sub 1/2} deep level originates from V{sub C}.
ISSN:	0003-6951 1077-3118 1077-3118
DOI:	10.1063/1.4796141