CHARACTERIZATION OF SOL-GEL MULTICOATED THICK Pb(Zr0.52, Ti0.48)O3 FILMS ON PLATINIZED SILICON SUBSTRATES FOR MICRODEVICES APPLICATIONS

• Published in: Jpn.J.Appl.Phys ,Part 1. Vol. 42, no. 12, pp. 7497-7501. 2003 Vol. 42; no. 12; pp. 7497 - 7501
• Main Authors: J-S, Park, S-H, Kim, H-D, Park, Ha J, S-G, Kang
• Format: Journal Article
• Language: English
• Published: 2003
• ISSN: 0021-4922
• DOI: 10.1143/jjap.42.7497

The microstructures and electrical properties of thin and thick Pb(Zr0.52, Ti0.48)O3 (52/48 PZT) films for microdevice applications with thicknesses from 480 nm to 2.3 mu m on 350 nm Pt(111)/40 nm Ti /300 nm SiO2/Si 525 mu m substrates fabricated by a sol-gel multicoating process were investigated. These PZT films showed dense and homogeneous surface microstructures. The crystalline structures of 480-nm-thick PZT films showed a (111) preferred orientation over (100), (200) and (110) orientations. The intensity ratios of (100) and (200) to (111) increased at PZT film thicknesses greater than 480 nm. By AES, small-composition-variation peaks at an interval of approximately 120 nm at interfaces produced by each PZT coating process of 480 nm PZT films were found. Dielectric constants increased from 825 to 880 at 100 kHz and PZT film thicknesses from 480 nm to 2.3 mu m. The Pr and Ec of 2.3-mu m-thick PZT films were about 30 mu C/cm2 and 58 kV/cm, resp. The e31,f of 1-mu m- and 2-mu m-thick PZT films was characterized by the fabricated e31,f measurement system before and after poling. 11 refs.