Fabrication and electrical characterization of Pt/(Ba,Sr)TiO3/Pt capacitors for ultralarge-scale integrated dynamic random access memory applications

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Bibliographic Details
Published in:	Japanese journal of applied physics Vol. 35; no. 2B; pp. 1548 - 1552
Main Authors:	PARK, S. O, HWANG, C. S, CHO, H.-J, KANG, C. S, KANG, H.-K, LEE, S. I, LEE, M. Y
Format:	Conference Proceeding
Language:	English
Published:	Tokyo Japanese journal of applied physics 1996
Subjects:	Applied sciences Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices VLSI circuit Dielectric properties Dynamical storage Layer thickness Strontium Titanates Thin film Random access memory(RAM) Quaternary compound Size effect Barium Titanates Capacitance Leakage current Titanium oxide Capacitor Electrical characteristic
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Description
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.35.1548