Ge segregation at Si/Si1-xGex interfaces grown by molecular beam epitaxy

Saved in:

Bibliographic Details
Published in:	Applied physics letters Vol. 55; no. 24; pp. 2520 - 2522
Main Authors:	ZALM, P. C, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 11-12-1989
Subjects:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Silicon Impurity segregation Molecular beam condensation Epitaxy Solid solid interface
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.101995