Gate-tuned quantum Hall states in Dirac semimetal (Cd1-x Zn x )3As2

• Published in: Science advances Vol. 4; no. 5; p. eaar5668
• Main Authors: Nishihaya, Shinichi, Uchida, Masaki, Nakazawa, Yusuke, Kriener, Markus, Kozuka, Yusuke, Taguchi, Yasujiro, Kawasaki, Masashi
• Format: Journal Article
• Language: English
• Published: American Association for the Advancement of Science 18-05-2018
• Subjects: Condensed Matter Physics; Materials Science; SciAdv r-articles
• ISSN: 2375-2548
• DOI: 10.1126/sciadv.aar5668

The recent discovery of topological Dirac semimetals (DSMs) has provoked intense curiosity not only regarding Weyl physics in solids but also about topological phase transitions originating from DSMs. One specific area of interest is controlling the dimensionality to realize two-dimensional quantum phases such as quantum Hall and quantum spin Hall states. For investigating these phases, the Fermi level is a key controlling parameter. From this perspective, we report the carrier density control of quantum Hall states realized in thin films of DSM Cd3As2. Chemical doping of Zn combined with electrostatic gating has enabled us to tune the carrier density both over a wide range and continuously, even across the charge neutrality point. Comprehensive analyses of gate-tuned quantum transport have revealed Landau-level formation from linearly dispersed sub-bands and its contribution to the quantum Hall states. Our findings also pave the way for investigating the low-energy physics near the Dirac points of DSMs.