Epitaxial growth of Sn on Si(111) : a direct atomic-structure determination of the (2√3x2√3)R30° reconstructed surface

• Published in: Physical review. B, Condensed matter Vol. 44; no. 23; pp. 13144 - 13147
• Main Authors: TÖRNEVIK, C, HAMMAR, M, NILSSON, N. G, FLODSTRÖM, S. A
• Format: Journal Article
• Language: English; Japanese
• Published: Woodbury, NY American Physical Society 15-12-1991; American Institute of Physics
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Characterization; Surface reconstruction; Transmission electron microscopy; Reflection high energy electron diffraction; Tin Silicon; Crystal orientation; Epitaxy; X ray topography; Silicon; Experimental study; Surface
• ISSN: 0163-1829; 1095-3795
• DOI: 10.1103/physrevb.44.13144