Integration and frequency dependent electrical modeling of Through Silicon Vias (TSV) for high density 3DICs

• Published in: 2010 IEEE International Interconnect Technology Conference pp. 1 - 3
• Main Authors: Cadix, L., Rousseau, M., Fuchs, C., Leduc, P., Thuaire, A., El Farhane, R., Chaabouni, H., Anciant, R., Huguenin, J.-L., Coudrain, P., Farcy, A., Bermond, C., Sillon, N., Flechet, B., Ancey, P.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-06-2010
• Subjects: Analytical models; CMOS process; Design optimization; Frequency dependence; Polarization; Process design; Semiconductor device modeling; Silicon; Testing; Through-silicon vias
• ISBN: 1424476763; 9781424476763
• ISSN: 2380-632X; 2380-6338
• DOI: 10.1109/IITC.2010.5510728

Evaluation of Through Silicon Via (TSV) electrical parameters is mandatory to improve heterogeneous 3D chip performance in the frame of a "more than Moore" roadmap. Accurate modeling of TSV is consequently essential to perform design, material and process optimizations. This paper presents a frequency dependent analytical model including MOS effect of high aspect ratio TSV achieved in a full CMOS 65 nm platform according to a face-to-face Via Last process. Specific test structures with bulk contacts to polarize silicon were integrated enabling C(V) and RF measurements. TSV equivalent model including all substrate effects is proposed and simplified according to CMOS 65 nm specificities (voltage, frequency, dimensions and Si conductivity) leading to a full analytical model.