Terahertz plasmon resonances in GaN and graphene

The plasmon resonance and tunability have been investigated in GaN-based and graphene device, the good agreement between theory and experiments indicate the potentially advantages of GaN device for filling the terahertz (THz) gap. Stronger resonant absorption will lead to the hydrodynamic rectifying...

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Published in:2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 101 - 102
Main Authors: Lin Wang, Anqi Yu, Xiaoshuang Chen, Weida Hu, Wei Lu
Format: Conference Proceeding
Language:English
Published: IEEE 01-08-2013
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Abstract The plasmon resonance and tunability have been investigated in GaN-based and graphene device, the good agreement between theory and experiments indicate the potentially advantages of GaN device for filling the terahertz (THz) gap. Stronger resonant absorption will lead to the hydrodynamic rectifying of THz radiation in wide spectrum region, paving the way for self-coupling and detection of THz radiation in multiple quantum systems.
AbstractList The plasmon resonance and tunability have been investigated in GaN-based and graphene device, the good agreement between theory and experiments indicate the potentially advantages of GaN device for filling the terahertz (THz) gap. Stronger resonant absorption will lead to the hydrodynamic rectifying of THz radiation in wide spectrum region, paving the way for self-coupling and detection of THz radiation in multiple quantum systems.
Author Lin Wang
Weida Hu
Xiaoshuang Chen
Wei Lu
Anqi Yu
Author_xml – sequence: 1
  surname: Lin Wang
  fullname: Lin Wang
  organization: Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
– sequence: 2
  surname: Anqi Yu
  fullname: Anqi Yu
  organization: Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
– sequence: 3
  surname: Xiaoshuang Chen
  fullname: Xiaoshuang Chen
  email: xschen@mail.sitp.ac.cn
  organization: Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
– sequence: 4
  surname: Weida Hu
  fullname: Weida Hu
  email: wdhu@mail.sitp.ac.cn
  organization: Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
– sequence: 5
  surname: Wei Lu
  fullname: Wei Lu
  organization: Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
BookMark eNotj8FOwzAQRI0oEm3JD8AlP5Cy67Wd-ogKLUhVeyBI3ConXdOg1onsXuDrqUROo9GTRm8mYhS6wELcI8wQwT5uPt63zzMJSDNjiFCpK5HZco7KlGQIQV-LyVDAfo7EWKKeFyRJ3YospW8AIAmkjBkLqDi6A8fzb94fXTp1IY-cuuBCwylvQ75ym9yFff4VXX_gwHfixrtj4mzIqaiWL9XitVhvV2-Lp3XRWjgXXunaKK7RoddItr6YejS6gdpYVZZSX0hplGocaOLG1tJKJZ213u-dBpqKh__Zlpl3fWxPLv7shr_0BzpMR2o
ContentType Conference Proceeding
DBID 6IE
6IL
CBEJK
RIE
RIL
DOI 10.1109/NUSOD.2013.6633144
DatabaseName IEEE Electronic Library (IEL) Conference Proceedings
IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume
IEEE Xplore All Conference Proceedings
IEEE Electronic Library Online
IEEE Proceedings Order Plans (POP All) 1998-Present
DatabaseTitleList
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Electronic Library Online
  url: http://ieeexplore.ieee.org/Xplore/DynWel.jsp
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISBN 9781467363105
1467363103
EndPage 102
ExternalDocumentID 6633144
Genre orig-research
GroupedDBID 6IE
6IF
6IH
6IK
6IL
6IN
AAJGR
ADZIZ
ALMA_UNASSIGNED_HOLDINGS
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CBEJK
CHZPO
IPLJI
OCL
RIE
RIL
ID FETCH-LOGICAL-i90t-f45b64eb1a1f5139b663f165c0b69477251a17644ca053ec9b29242a99ffda503
IEDL.DBID RIE
ISBN 146736309X
9781467363099
ISSN 2158-3234
IngestDate Wed Jun 26 19:25:11 EDT 2024
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-i90t-f45b64eb1a1f5139b663f165c0b69477251a17644ca053ec9b29242a99ffda503
PageCount 2
ParticipantIDs ieee_primary_6633144
PublicationCentury 2000
PublicationDate 2013-Aug.
PublicationDateYYYYMMDD 2013-08-01
PublicationDate_xml – month: 08
  year: 2013
  text: 2013-Aug.
PublicationDecade 2010
PublicationTitle 2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
PublicationTitleAbbrev NUSOD
PublicationYear 2013
Publisher IEEE
Publisher_xml – name: IEEE
SSID ssj0003203466
ssj0001767267
Score 1.563152
Snippet The plasmon resonance and tunability have been investigated in GaN-based and graphene device, the good agreement between theory and experiments indicate the...
SourceID ieee
SourceType Publisher
StartPage 101
SubjectTerms Gallium nitride
Graphene
HEMTs
MODFETs
Plasma waves
Plasmons
Resonant frequency
Title Terahertz plasmon resonances in GaN and graphene
URI https://ieeexplore.ieee.org/document/6633144
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07b8IwELYKU7v0AVXf8tCxBsd2bN9coEy0ElRiQ07iSCwB8Vj663s2AVqpS7c4GWLLyX13vvu-I-S50HlRFo4zYbVlKufAnPQlSz1oBYlyMkopDcdmNLW9fpDJeTlwYbz3sfjMd8JlzOUXi3wbjsq6iI4SA4AGaRiwO67W8TzFaLNvphTGUnC5S1UiqFkmhVSR1xXqmCSH6V7uqR7DnlDDoTv6HL_3QtWX7NRv_NV6JSLP4Px_c74g7SOFj34cwOmSnPjqipz9UB9sET7xaGn8avNFl-hD4_dIMfZeBAUOv6bzir65EXVVQaOoNdrENpkM-pPXIasbKLA58A0rVZpphcbYJWWKnl6GcykTneY806DQrU7xiUGHKHf4K_ocMoHRmHAAJW5fyuU1aVaLyt8Qyo0uQIMVmQSVZIhpIXOdp06Z0jgrbkkrLH223ElkzOpV3_19-56cithVItTRPZDmZrX1j6SxLrZPcVO_AaL7l8I
link.rule.ids 310,311,782,786,791,792,798,27934,54767
linkProvider IEEE
linkToHtml http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV05T8MwFLZoGYCFo0XceGDEreMr8UxbiigBqUHqVjmJI3VJqx4Lv55nN21BYmGzncG27LzD733fQ-ghV1le5IYSFqmIiIxqYrgtiLRaCR0Iwz2VUn8YxqOo03U0OY9bLIy11ief2ZZr-lh-Ps1W7qmsDdqRgwNQQ_tShCpco7V2LyowtCmn5PqcUb4OVoJaiwhnXHhkl8tk4lSPNoRPVV9vIDVUt-PP4XvH5X3xVjXnr-IrXvf0jv-36hPU3IH48MdWPZ2iPVueoaMf_IMNRBMLssbOl194BlY03EgM3vfUcXDYBZ6U-NnE2JQ59rTWIBWbKOl1k6c-qUookImmS1IImSoB4tgEhQRbL4W1FIGSGU2VFmBYS_gSgkmUGfgZbaZTBv4YM1oXcICS8nNUL6elvUCYhirXSkcs5VoEKWg1F7vOpBFhEZqIXaKG2_p4tibJGFe7vvp7-B4d9JO3wXjwEr9eo0Pma0y4rLobVF_OV_YW1Rb56s4f8Dfe5JsT
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=2013+13th+International+Conference+on+Numerical+Simulation+of+Optoelectronic+Devices+%28NUSOD%29&rft.atitle=Terahertz+plasmon+resonances+in+GaN+and+graphene&rft.au=Lin+Wang&rft.au=Anqi+Yu&rft.au=Xiaoshuang+Chen&rft.au=Weida+Hu&rft.date=2013-08-01&rft.pub=IEEE&rft.isbn=146736309X&rft.issn=2158-3234&rft.spage=101&rft.epage=102&rft_id=info:doi/10.1109%2FNUSOD.2013.6633144&rft.externalDocID=6633144
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2158-3234&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2158-3234&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2158-3234&client=summon