Terahertz plasmon resonances in GaN and graphene

Terahertz plasmon resonances in GaN and graphene

The plasmon resonance and tunability have been investigated in GaN-based and graphene device, the good agreement between theory and experiments indicate the potentially advantages of GaN device for filling the terahertz (THz) gap. Stronger resonant absorption will lead to the hydrodynamic rectifying...

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Bibliographic Details
Published in:2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 101 - 102
Main Authors: Lin Wang, Anqi Yu, Xiaoshuang Chen, Weida Hu, Wei Lu
Format: Conference Proceeding
Language:English
Published: IEEE 01-08-2013
Subjects:
Gallium nitride
Graphene
HEMTs
MODFETs
Plasma waves
Plasmons
Resonant frequency
Online Access:Get full text
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Summary:The plasmon resonance and tunability have been investigated in GaN-based and graphene device, the good agreement between theory and experiments indicate the potentially advantages of GaN device for filling the terahertz (THz) gap. Stronger resonant absorption will lead to the hydrodynamic rectifying of THz radiation in wide spectrum region, paving the way for self-coupling and detection of THz radiation in multiple quantum systems.
ISBN:146736309X
9781467363099
ISSN:2158-3234
DOI:10.1109/NUSOD.2013.6633144