Selective growth of site-controlled Quantum Dots

Selective growth of site-controlled Quantum Dots

Nanoselective growth of site-controlled quantum dot is reported. InAs(P)/InP QDs are grown by MOVPE on patterned substrate. Partial patterning of the substrate using a specific design taking into account the diffusion length of the active species from 0.5 μm to 200μm according to the growth conditio...

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Bibliographic Details
Published in:IEEE Winter Topicals 2011 pp. 37 - 38
Main Authors: Gogneau, N, Fain, B, Le Gratiet, L, Patriarche, G, Largeau, L, Beaudoin, G, Ulysse, C, Elvira, D, Braive, R, Beveratos, A, Robert-Philip, I, Sagnes, I
Format: Conference Proceeding
Language:English
Published: IEEE 01-01-2011
Subjects:
Dielectrics
Epitaxial growth
Epitaxial layers
Indium phosphide
Photonics
Scanning electron microscopy
Transmission electron microscopy
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Summary:Nanoselective growth of site-controlled quantum dot is reported. InAs(P)/InP QDs are grown by MOVPE on patterned substrate. Partial patterning of the substrate using a specific design taking into account the diffusion length of the active species from 0.5 μm to 200μm according to the growth conditions is done.
ISBN:1424484286
9781424484287
DOI:10.1109/PHOTWTM.2011.5730034